HN58X2432FPIE RENESAS [Renesas Technology Corp], HN58X2432FPIE Datasheet - Page 18

• Manufacturer Part Number: HN58X2432FPIE
• Manufacturer: RENESAS [Renesas Technology Corp]

HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I
Notes
Data Protection at V
When V
may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional
programming, this EEPROM has a power on reset function. Be careful of the notices described below in
order for the power on reset function to operate correctly.
• SCL and SDA should be fixed to V
• V
• V
• V
Write/Erase Endurance and Data Retention Time
The endurance is 10
cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed
less than 10
Noise Suppression Time
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than
50 ns. Be careful not to allow noise of width more than 50 ns.
Rev.5.00, Jan.14.2005, page 18 of 20
during V
unintentional programming mode.
CC
CC
CC
should be turned off after the EEPROM is placed in a standby state.
should be turned on from the ground level(V
turn on speed should be longer than 10 µs.
CC
is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc)
4
CC
cycles.
on/off may cause the trigger for the unintentional programming.
5
cycles in case of page programming and 10
CC
On/Off
CC
or V
SS
during V
SS
) in order for the EEPROM not to enter the
CC
on/off. Low to high or high to low transition
4
cycles in case of byte programming (1%