HN58V65AT-10 HITACHI [Hitachi Semiconductor], HN58V65AT-10 Datasheet
HN58V65AT-10
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HN58V65AT-10 Summary of contents
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HN58V65A Series HN58V66A Series 64 k EEPROM (8-kword 8-bit) Ready/Busy function, RES function (HN58V66A) Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word and high relisbility by employing advanced MNOS memory ...
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... Industrial versions (Temperatur range: –20 to 85˚C and –40 to 85˚C) are also available. Ordering Information Access time Type No. 2 HN58V65AP-10 100 ns HN58V66AP-10 100 ns HN58V65AFP-10 100 ns HN58V66AFP-10 100 ns HN58V65AT-10 100 ns HN58V66AT-10 100 ns Pin Arrangement HN58V65AP Series HN58V65AFP Series RDY/Busy 1 A12 ...
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... CE 28 A10 I/O0 19 I/ I/O3 23 I/O4 24 I/O5 25 I/ A10 HN58V65A Series, HN58V66A Series HN58V65AT Series (Top view) HN58V66AT Series (Top view A12 9 RDY/Busy A11 ...
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HN58V65A Series, HN58V66A Series Pin Description Pin name Function A0 to A12 Address input I/O0 to I/O7 Data input/output OE Output enable CE Chip enable WE Write enable V Power supply CC V Ground SS RDY/Busy Ready busy 1 RES* ...
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Operation Table CE Operation Read V IL Standby V IH Write V IL Deselect V IL Write Inhibit Data Polling V IL Program reset Notes: 1. Refer to the recommended DC operating conditions Don’t care 3. This function ...
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HN58V65A Series, HN58V66A Series Recommended DC Operating Conditions Parameter Supply voltage Input voltage Operating temperature Notes min: –1.0 V for pulse width 2.2 V for V = 3 ...
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AC Characteristics ( 70˚C, V Test Conditions Input pulse levels : 0 2 Input rise and fall time : Input timing reference levels : 0.8, 1.8 V Output ...
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HN58V65A Series, HN58V66A Series Write Cycle 2 Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) ...
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Read Cycle 4 Parameter Address to output delay CE to output delay OE to output delay Address to output hold OE (CE) high to output float* 1 RES low to output float* 1, ...
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HN58V65A Series, HN58V66A Series Write Cycle 4 Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) ...
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Read Timing Waveform Address CE OE High WE Data Out 2 RES * HN58V65A Series, HN58V66A Series t ACC Data out valid DFR ...
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HN58V65A Series, HN58V66A Series Byte Write Timing Waveform(1) (WE Controlled) Address Din RDY/Busy t RES 2 RES * OES t DS High ...
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Byte Write Timing Waveform(2) (CE Controlled) Address Din High-Z RDY/Busy t RES 2 RES * V CC HN58V65A Series, HN58V66A Series OES ...
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HN58V65A Series, HN58V66A Series Page Write Timing Waveform(1) (WE Controlled) *7 Address A0 to A12 OES Din High-Z RDY/Busy RES * t RES ...
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Page Write Timing Waveform(2) (CE Controlled) *8 Address A0 to A12 OES Din High-Z RDY/Busy RES * t RES V CC HN58V65A Series, ...
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HN58V65A Series, HN58V66A Series Data Polling Timing Waveform Address OEH OE Din X I/ Dout OES t DW Dout X ...
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Toggle Bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When the internal ...
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HN58V65A Series, HN58V66A Series Software Data Protection Timing Waveform(1) (in protection mode Address 1555 Data AA Software Data Protection Timing Waveform(2) (in non-protection mode Address 1555 0AAA Data BLC ...
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Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional bytes can be written ...
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HN58V65A Series, HN58V66A Series WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge CE, and data is latched by the rising edge CE. Write/Erase Endurance and Data Retention ...
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Data protection at V on/off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may CC act as a trigger and turn the EEPROM to program mode by mistake. ...
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HN58V65A Series, HN58V66A Series (2) Protection by RES (only the HN58V66A series) The unprogrammable state can be realized by that the CPU’s reset signal inputs directly to the EEPROM’s RES pin. RES should be kept V programming operation when RES ...
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Software data protection To prevent unintentional programming caused by noise generated by external circuits, this device has the software data protection function. In software data protection mode, 3 bytes of data must be input before write data as follows. ...
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HN58V65A Series, HN58V66A Series Package Dimensions HN58V65AP Series HN58V66AP Series (DP-28) 35.6 36.5 Max 28 1 1.2 1.9 Max 2.54 0. 0.48 0.10 Hitachi Code JEDEC Code EIAJ Code Weight (reference value) Unit: mm 15.24 + 0.11 0.25 ...
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Package Dimensions (cont) HN58V65AFP Series HN58V66AFP Series (FP-28D) 18.3 18.8 Max 28 1 1.12 Max 1.27 0.40 0.08 0.38 0.06 Dimension including the plating thickness Base material dimension HN58V65A Series, HN58V66A Series 15 14 0.15 0.20 M Hitachi Code JEDEC ...
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... HN58V65A Series, HN58V66A Series Package Dimensions (cont) HN58V65AT Series HN58V66AT Series (TFP-28DB) 8.00 8.20 Max 28 1 0.55 0.22 0.08 0.10 0.20 0.06 0.45 Max 0.10 Dimension including the plating thickness Base material dimension 13.40 0.30 Hitachi Code JEDEC Code EIAJ Code Weight (reference value) Unit: mm 0.80 0 – 5 0.50 0.10 TFP-28DB — — 0.23 g ...
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When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole ...