HN58V1001FP-25E RENESAS [Renesas Technology Corp], HN58V1001FP-25E Datasheet - Page 17

• Manufacturer Part Number: HN58V1001FP-25E
• Manufacturer: RENESAS [Renesas Technology Corp]

HN58V1001 Series
Write/Erase Endurance and Data Retention Time
The endurance is 10
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 20 ns
or less in program mode.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
Rev.8.00, Nov. 28. 2003, page 17 of 21
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 20 ns on the
control pins.
4
cycles in case of the page programming and 10
4
cycles.
WE
CE
OE
20 ns max
3
cycles in case of the byte programming
V
0 V
V
0 V
IH
IH