HN58C1001P-15 HITACHI [Hitachi Semiconductor], HN58C1001P-15 Datasheet - Page 16

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HN58C1001P-15

Manufacturer Part Number
HN58C1001P-15
Description
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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HN58C1001 Series
Write/Erase Endurance and Data Retention Time
The endurance is 10
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10
Data Protection
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake.
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 20 ns
or less in program mode.
Be careful not to allow noise of a width of more than 20 ns on the control pins.
16
4
cycles in case of the page programming and 10
4
cycles.
WE
CE
OE
20 ns max
3
cycles in case of the byte programming
V
0 V
V
0 V
IH
IH

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