ISPLSI1032E70LTNI LATTICE [Lattice Semiconductor], ISPLSI1032E70LTNI Datasheet - Page 3

• Manufacturer Part Number: ISPLSI1032E70LTNI
• Description: In-System Programmable High Density PLD
• Manufacturer: LATTICE [Lattice Semiconductor]

Supply Voltage V
Input Voltage Applied ........................ -2.5 to V
Off-State Output Voltage Applied ..... -2.5 to V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
V
V
V
C
C
Absolute Maximum Ratings
DC Recommended Operating Conditions
Capacitance (T
SYMBOL
Data Retention Specifications
Data Retention
Erase/Reprogram Cycles
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
CC
IL
IH
1
2
SYMBOL
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
Y0 Clock Capacitance
cc
PARAMETER
...................................-0.5 to +7.0V
Supply Voltage
Input Low Voltage
Input High Voltage
A
=25
J
) with Power Applied ... 150°C
o
C, f=1.0 MHz)
PARAMETER
1
PARAMETER
CC
CC
+1.0V
+1.0V
Commercial
Industrial
MINIMUM
3
10000
20
Specifications ispLSI 1032E
T
T
A
A
= 0°C to + 70°C
= -40°C to + 85°C
TYPICAL
15
8
MAXIMUM
UNITS
–
–
pf
pf
MIN.
4.75
4.5
0
2.0
V = 5.0V, V
V = 5.0V, V
CC
CC
TEST CONDITIONS
V
MAX.
5.25
5.5
0.8
cc
UNITS
Cycles
+1
Years
PIN
PIN
Table 2-0006/1032E
Table 2-0008/1032E
Table 2-0005/1032E
= 2.0V
= 2.0V
UNITS
V
V
V
V