2SD1101ACTL-E RENESAS [Renesas Technology Corp], 2SD1101ACTL-E Datasheet - Page 3

• Manufacturer Part Number: 2SD1101ACTL-E
• Description: Silicon NPN Epitaxial
• Manufacturer: RENESAS [Renesas Technology Corp]

2SD1101
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 5
1,000
300
100
150
100
0.5
0.4
0.3
0.2
0.1
30
10
50
3
1
0
0
Maximum Collector Dissipation Curve
0
1
V
Base to Emitter Voltage V
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
CE
I
Collector to Emitter Saturation
C
Voltage vs. Collector Current
= 1 V
Collector Current I
= 10 I
3
0.2
B
50
10
Ta = 75°C
0.4
30
Ta = 75°C
0.6
100
100
C
25°C
(mA)
0.8
BE
300
25°C
(V)
150
1.0
1,000
5,000
2,000
1,000
500
400
300
200
100
500
200
100
400
300
200
100
50
20
10
0
5
0
10
1
Collector to Emitter Voltage V
DC Current Transfer Ratio vs.
Typical Output Characteristics
Gain Bandwidth Product vs.
20
Collector Current I
Collector Current I
3
0.4
Collector Current
Collector Current
10
50
Ta = 75°C
0.8
2.5
2.0
1.5
1.0
0.5 mA
I
25°C
100 200
B
30
= 0
1.2
100
C
C
V
Pulse
V
(mA)
(mA)
CE
CE
300 1,000
1.6
500 1,000
= 1 V
= 1 V
CE
(V)
2.0