FSL13A0D3 INTERSIL [Intersil Corporation], FSL13A0D3 Datasheet - Page 3

• Manufacturer Part Number: FSL13A0D3
• Description: 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
• Manufacturer: INTERSIL [Intersil Corporation]

Source to Drain Diode Specifications
Electrical Specifications up to 100K RAD
NOTES:
Single Event Effects (SEB, SEGR)
NOTES:
Typical Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
Forward Voltage
Reverse Recovery Time
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
Single Event Effects Safe Operating Area
1. Pulse test, 300 s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
120
100
80
60
40
20
0
0
PARAMETER
TEMP = 25
FLUENCE = 1E5 IONS/cm
TEST
-5
o
PARAMETER
C
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm
2
(typical), T = 25
-10
4-3
V
GS
2
(TYPICAL)
SYMBOL
(V)
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
V
2
2
-15
t
SD
, RANGE = 43
, RANGE = 36
rr
o
(Note 4)
C.
SYMBOL
SEESOA
Unless Otherwise Specified
GS
I
I
-20
SD
SD
= 12V, V
FSL13A0D, FSL13A0R
T
= 9A
= 9A, dI
C
= 25
r
SYMBOL
V
DS(ON)12
V
BV
DS(ON)
GS(TH)
I
I
SPECIES
TEST CONDITIONS
GSS
DSS
DS
-25
o
SD
DSS
C, Unless Otherwise Specified
ION
Br
Br
Br
Ni
= 0V and V
/dt = 100A/ s
V
V
V
V
V
V
ENVIRONMENT (NOTE 5)
GS
GS
GS
GS
GS
GS
TEST CONDITIONS
GS
= 0, I
= V
= 20V, V
= 0, V
= 12V, I
= 12V, I
TYPICAL LET
(MeV/mg/cm)
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
DS
= 0V, V
1E-3
1E-4
1E-5
1E-6
1E-7
D
DS
, I
= 1mA
26
37
37
37
D
D
10
D
= 80V
DS
= 9A
= 6A
= 1mA
DS
= 0V
= 80% BV
GAMMA DOT CURRENT TO I
MIN
0.6
-
RANGE ( )
30
TYPICAL
DSS
43
36
36
36
DRAIN SUPPLY (V)
.
MIN
100
1.5
-
-
-
-
TYP
-
-
100
V
APPLIED
GS
-20
-10
-15
-20
(V)
0.180
MAX
1.70
100
BIAS
4.0
MAX
25
260
1.8
-
AS
300
V
300A
ILM = 10A
30A
100A
MAXIMUM
DS
(NOTE 6)
UNITS
UNITS
BIAS (V)
100
100
80
50
nA
ns
V
V
V
V
A
1000