NTE50 NTE [NTE Electronics], NTE50 Datasheet - Page 2

• Manufacturer Part Number: NTE50
• Description: Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver
• Manufacturer: NTE [NTE Electronics]

Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Parameter
(30.48)
1.200
Ref
.100 (2.54)
(10.16)
(12.7)
(7.62)
.500
.300
.400
Min
A
C
= +25 C unless otherwise specified)
.380 (9.56)
E
300 s, Duty Cycle
V
V
Symbol
V
V
(BR)CEO
(BR)EBO
CE(sat)
I
BE(on)
C
h
CBO
B
f
FE
T
ob
C
I
I
V
I
I
I
I
I
I
I
f = 100MHz, Note 1
V
C
E
C
C
C
C
C
C
C
CB
CB
(9.52)
= 100 A, I
.325
= 1mA, I
= 50mA, V
= 250mA, V
= 500mA, V
= 250mA, I
= 250mA, I
= 250mA, V
= 250mA, V
.132 (3.35) Dia
= 40V, I
= 10V, I
.070 (1.78) x 45
Test Conditions
.050 (1.27)
.100 (2.54)
.180 (4.57)
B
2%.
E
E
= 0
C
Chamf
CE
B
B
= 0
= 0, f = 100kHz
CE
CE
CE
CE
= 0
= 10mA
= 25mA
= 1V
= 1V
= 1V
= 5V
= 5V,
Min Typ Max Unit
100
80
60
50
4
–
–
–
–
–
–
0.18
0.74
125
100
150
0.1
55
–
–
–
6
100
0.4
1.2
12
–
–
–
–
–
–
–
MHz
nA
pF
V
V
V
V
V