2SK2882_06 TOSHIBA [Toshiba Semiconductor], 2SK2882_06 Datasheet

2SK2882_06

Manufacturer Part Number

2SK2882_06

Description

Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK2882_06.pdf (6 pages)

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Chopper Regulator, DC-DC Converter and Motor Drive

Applications

•

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum junction temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

= 50 V, T

Characteristics

Pulse (Note 1)

= 20 kΩ)

DSS

= 25°C (initial), L = 0.8 mH, R

= 0.8~2.0 V (V

(Note 1)

(Note 2)

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

| = 17 S (typ.)

stg

2SK2882

= 10 V, I

= 0.08 Ω (typ.)

Symbol

th (ch-c)

th (ch-a)

= 150 V)

−55~150

Rating

150

±20

176

150

4.5

= 1 mA)

= 25 Ω, I

Max

2.78

62.5

°C/W

Unit

°C

= 18 A

Weight: 1.9 g (typ.)

JEDEC

JEITA

TOSHIBA

-π-MOSV)

2-10R1B

SC-67

2006-11-20

―

2SK2882

Unit: mm

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