2SK2789_09 TOSHIBA [Toshiba Semiconductor], 2SK2789_09 Datasheet

2SK2789_09

Manufacturer Part Number

2SK2789_09

Description

Chopper Regulator, DC−DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK2789_09.pdf (6 pages)

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within

the absolute maximum ratings. Please design the appropriate reliability upon

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

= 25 V, T

Pulse (Note 1)

= 20 kΩ)

: I

: V

DSS

= 25°C (initial), L = 428 μH, I

(Note 1)

(Note 2)

= 0.8 to 2.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

stg

Symbol

th (ch−c)

th (ch−a)

DS (ON)

2SK2789

| = 16 S (typ.)

= 10 V, I

= 66 mΩ (typ.)

−55 to 150

= 100 V)

Rating

100

±20

108

193

150

2.08

83.3

Max

= 27 A, R

= 1 mA)

°C / W

Unit

°C

= 25 Ω

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

−π−MOSV)

2-10S1B

2-10S2B

2009-12-21

―

2SK2789

Unit: mm

Related parts for 2SK2789_09

2SK2789_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

Page 3

3 2SK2789 2009-12-21 ...

Page 4

4 2SK2789 2009-12-21 ...

Page 5

Ω 428 μ 2SK2789 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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