ZXMD65P02N8_04 ZETEX [Zetex Semiconductors], ZXMD65P02N8_04 Datasheet - Page 3

• Manufacturer Part Number: ZXMD65P02N8_04
• Description: DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ISSUE 1 - JULY 2004
ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1)(3)
amb
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
3
-20
-0.7
TYP.
29.9
57.9
63.2
39.2
28.8
960
480
240
8.5
6.6
1.8
20
10
MAX. UNIT CONDITIONS
-1
-100
0.050
0.080
0.95
ZXMD65P02N8
V
µA
nA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
I
V
I
V
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
S E M I C O N D U C T O R S
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=-2.9A
=-250µA, V
=-250µA, V
=25°C, I
=25°C, I
GS
=6.0Ω, V
=-16V, V
=-10V,I
=-15 V, V
=-10V,V
=-4.5V, I
=-2.5V, I
=0V
=-10V, I
=±12V, V
S
F
=-2.9A,
D
=-2.9A,
GS
GS
=-2.9A
D
GS
D
D
GS
DS
GS
DS
=-2.9A
=-2.9A
=-1.5A
=-5V
=-4.5V
=0V
=
=0V
=0V,
=0V