SSM3J13T_07 TOSHIBA [Toshiba Semiconductor], SSM3J13T_07 Datasheet - Page 2

• Manufacturer Part Number: SSM3J13T_07
• Description: Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Switching Time Test Circuit
Precaution
−2.5 V
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 3: Pulse test
(a) Test circuit
for this product. For normal switching operation, V
requires lower voltage than V
V
(relationship can be established as follows: V
Please take this into consideration for using the device.
0
th
can be expressed as voltage between gate and source when low operating current value is I
10 μs
Characteristics
IN
Turn-on time
Turn-off time
V
DD
th
(Ta = 25°C)
OUT
.
V
V
R
V
R
D.U. < = 1%
V
COMMON SOURCE
Ta = 25°C
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DD
IN
G
I
I
C
|Y
C
C
GSS
DSS
V
t
t
on
off
oss
: t
rss
iss
= 4.7 Ω
th
fs
= −10 V
r
|
, t
f
< 5 ns
GS (off)
V
I
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
= −1 mA, V
= −1 mA, V
= −1.5 A, V
= −1.5 A, V
= −1.5 A, V
GS (on)
2
= −12 V, V
= −3 V, I
= −3 V, I
= −10 V, V
= −10 V, V
= −10 V, V
= ±8 V, V
= −10 V, I
= 0~−2.5 V, R
< V
(b) V
(c) V
th
Test Condition
requires higher voltage than V
D
D
< V
GS
GS
GS
GS
GS
DS
D
= −0.1 mA
= −1.5 A
GS
GS
GS
GS
OUT
= −1 A
IN
= 0
= 8 V
= −4 V
= −2.5 V
= −2.0 V
GS (on)
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
= 4.7 Ω
)
0 V
−2.5 V
V
V
DS (ON)
DD
(Note 3)
(Note 3)
(Note 3)
(Note 3)
−0.45
Min
−12
3.8
−4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
10%
on
th
t
Typ.
890
203
288
120
r
⎯
50
70
90
48
⎯
⎯
⎯
⎯
⎯
10%
90%
and V
SSM3J13T
2007-11-01
D
GS (off)
−1.1
Max
180
90%
t
±1
−1
70
95
off
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= −100 μA
t
f
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
V
S