ZXMD63C03X_05 ZETEX [Zetex Semiconductors], ZXMD63C03X_05 Datasheet
ZXMD63C03X_05
Related parts for ZXMD63C03X_05
ZXMD63C03X_05 Summary of contents
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DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY = N-CHANNEL: V 30V; R (BR)DSS DS(ON) P-CHANNEL: V =-30V; R (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits ...
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ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V; T =25°C)(b)( =4.5V; T =70°C)(b)( Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation ...
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ISSUE 1 - OCTOBER 2005 N-CHANNEL CHARACTERISTICS 3 ZXMD63C03X ...
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ISSUE 1 - OCTOBER 2005 P-CHANNEL CHARACTERISTICS 4 ZXMD63C03X ...
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N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) R Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) ...
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N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 ZXMD63C03X 6 ...
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ISSUE 1 - OCTOBER 2005 N-CHANNEL CHARACTERISTICS 7 ZXMD63C03X ...
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P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...
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ISSUE 1 - OCTOBER 2005 P-CHANNEL CHARACTERISTICS 9 ZXMD63C03X ...
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P-CHANNEL TYPICAL CHARACTERISTICS A ISSUE 1 - OCTOBER 2005 ZXMD63C03X 10 ...
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PACKAGE DIMENSIONS DIM Millimeters MIN MAX MIN A 0.91 1.11 0.036 A1 0.10 0.20 0.004 B 0.25 0.36 0.010 C 0.13 0.18 0.005 D 2.95 3.05 0.116 e 0.65NOM e1 0.33NOM ...