ZXMD63C03X_05 ZETEX [Zetex Semiconductors], ZXMD63C03X_05 Datasheet

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ZXMD63C03X_05

Manufacturer Part Number
ZXMD63C03X_05
Description
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
N-CHANNEL: V
P-CHANNEL: V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXM63C03
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMD63C03XTA
ZXMD63C03XTC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
(BR)DSS
(BR)DSS
REEL SIZE
=-30V; R
=
(inches)
30V; R
13
7
DS(ON)
DS(ON)
=0.185
=
0.135 ; I
12 embossed
12 embossed
TAPE WIDTH
(mm)
;
I
D
D
=-2.0A
=
2.3A
1
QUANTITY
PER REEL
1,000
4,000
N-channel
ZXMD63C03X
P-channel
Top view
Pin-out
MSOP8

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ZXMD63C03X_05 Summary of contents

Page 1

DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY = N-CHANNEL: V 30V; R (BR)DSS DS(ON) P-CHANNEL: V =-30V; R (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits ...

Page 2

ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V; T =25°C)(b)( =4.5V; T =70°C)(b)( Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation ...

Page 3

ISSUE 1 - OCTOBER 2005 N-CHANNEL CHARACTERISTICS 3 ZXMD63C03X ...

Page 4

ISSUE 1 - OCTOBER 2005 P-CHANNEL CHARACTERISTICS 4 ZXMD63C03X ...

Page 5

N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) R Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) ...

Page 6

N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 ZXMD63C03X 6 ...

Page 7

ISSUE 1 - OCTOBER 2005 N-CHANNEL CHARACTERISTICS 7 ZXMD63C03X ...

Page 8

P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 9

ISSUE 1 - OCTOBER 2005 P-CHANNEL CHARACTERISTICS 9 ZXMD63C03X ...

Page 10

P-CHANNEL TYPICAL CHARACTERISTICS A ISSUE 1 - OCTOBER 2005 ZXMD63C03X 10 ...

Page 11

PACKAGE DIMENSIONS DIM Millimeters MIN MAX MIN A 0.91 1.11 0.036 A1 0.10 0.20 0.004 B 0.25 0.36 0.010 C 0.13 0.18 0.005 D 2.95 3.05 0.116 e 0.65NOM e1 0.33NOM ...

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