SI7911DN_06 VISHAY [Vishay Siliconix], SI7911DN_06 Datasheet - Page 2

• Manufacturer Part Number: SI7911DN_06
• Description: Dual P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model Si7911DN
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
SD
fs
gs
gd
r
f
g
V
DS
I
D
≅ −1 A, V
= −6 V, V
V
V
V
V
V
V
V
DS
GS
GS
I
DS
Test Condition
S
DD
GS
DS
= −2.3 A, V
= −5 V, V
= −4.5 V, I
= −1.8 V, I
= V
= −10 V, R
= −2.5 V, I
= −6 V, I
GEN
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
D
GS
D
= −250 µA
D
D
GS
= −5.7 A
D
L
= −4.5 V
= −5.7 A
= −1.1 A
= −5 A
= 10 Ω
= 0 V
D
G
= −5.7 A
= 6 Ω
Simulated
Data
0.039
0.055
0.077
−0.82
0.61
153
1.6
2.5
14
20
17
67
15
7
Measured
S-60244Rev. B, 20-Feb-06
Data
0.040
0.054
0.075
−0.80
Document Number: 72506
9.5
1.6
2.5
14
20
35
70
40
Unit
nC
ns
V
A
Ω
S
V