SI7478DP_09 VISHAY [Vishay Siliconix], SI7478DP_09 Datasheet
SI7478DP_09
Related parts for SI7478DP_09
SI7478DP_09 Summary of contents
Page 1
N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.0075 0.0088 4 PowerP AK SO ...
Page 2
Si7478DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b ...
Page 3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.012 0.010 0.008 0.006 0.004 0.002 0.000 Drain Current (A) D On-Resistance vs. Drain Current ...
Page 4
Si7478DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) ...
Page 5
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability ...
Page 6
PowerPAK SO-8, (SINGLE/DUAL Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. MIN. A 0.97 A1 0.00 b ...
Page 7
PowerPAK SO-8 Mounting and Thermal Considerations Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over ...
Page 8
AN821 Vishay Siliconix PowerPAK SO-8 DUAL The pin arrangement (drain, source, gate pins) and the pin dimensions of the PowerPAK SO-8 dual are the same as standard SO-8 dual devices. Therefore, the PowerPAK device connection pads match directly to those ...
Page 9
THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal resistance, Rθ junction-to-foot thermal resistance, Rθ is measured for the device mounted to an infinite heat sink and is therefore a characterization of the device ...
Page 10
AN821 Vishay Siliconix SYSTEM AND ELECTRICAL IMPACT OF PowerPAK SO-8 In any design, one must take into account the change in MOSFET r with temperature (Figure 7). DS(on) On-Resistance vs. Junction Temperature 1 1.6 I ...
Page 11
RECOMMENDED MINIMUM PADS FOR PowerPAK 0.024 (0.61) 0.026 (0.66) 0.050 (1.27) Return to Index Return to Index Document Number: 72599 Revision: 21-Jan-08 ® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.032 (0.82) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 ...
Page 12
... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...