SI6913DQ-T1 VISHAY [Vishay Siliconix], SI6913DQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6913DQ-T1
• Description: Dual P-Channel 12-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

www.vishay.com
4
Si6913DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.1
-0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
-50
2
1
10
- 4
-25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 400 mA
Threshold Voltage
T
J
- Temperature (_C)
25
10
- 3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
Limited by r
1
0.1
10
100
- 2
Safe Operating Area, Junction-to-Case
125
DS(on)
Single Pulse
T
V
C
Square Wave Pulse Duration (sec)
DS
= 25_C
150
- Drain-to-Source Voltage (V)
New Product
1
10
- 1
10
1
1 ms
10 ms
100 ms
1 s
10 s
dc
100
80
60
40
20
0
0.001
Single Pulse Power, Junction-to-Ambient
100
10
0.01
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
Time (sec)
1
A
= P
t
2
DM
0.1
Z
thJA
thJA
100
S-31914—Rev. A, 15-Sep-03
t
t
1
2
Document Number: 72368
(t)
= 124_C/W
1
600
10