SI7439DP_05 VISHAY [Vishay Siliconix], SI7439DP_05 Datasheet - Page 2
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SI7439DP_05
Manufacturer Part Number
SI7439DP_05
Description
P-Channel 150-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SI7439DP_05.pdf
(4 pages)
SPICE Device Model Si7439DP
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
V
Q
Q
D(on)
GS(th)
Q
g
SD
fs
gs
gd
g
V
DS
= −75 V, V
V
V
V
V
DS
I
GS
DS
V
DS
Test Condition
S
GS
= −10 V, V
= −4.2 A, V
= −10 V, I
= −15 V, I
= V
= −6 V, I
GS
GS
, I
= −10 V, I
D
= −250 µA
D
D
GS
D
GS
= −5.2 A
= −5.2 A
= −5 A
= −1 0V
= 0 V
D
= −5.2 A
Simulated
Data
0.075
0.080
−0.84
17.5
26.5
2.9
66
17
89
Measured
S-52521Rev. B, 12-Dec-05
Data
0.073
0.077
−0.78
17.5
26.5
Document Number: 73080
19
88
Unit
nC
V
A
Ω
S
V