TN2425_06 SUTEX [Supertex, Inc], TN2425_06 Datasheet - Page 2

• Manufacturer Part Number: TN2425_06
• Description: Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
• Manufacturer: SUTEX [Supertex, Inc]

Electrical Characteristics
Thermal Characteristics
Notes:
Switching Waveforms and Test Circuit
Notes:
ΔR
Symbol
TO-243AA
ΔV
R
Package
BV
† ID (continuous) is limited by max rated T
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm. Signifi cant PD increase possible on ceramic substrate.
V
1.All D.C. parameters 100% tested at 25
2.All A.C. parameters sample tested.
t
I
C
C
t
C
I
G
d(OFF)
I
D(ON)
V
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
t
GS(th)
ISS
SD
rr
FS
DSS
r
f
Output
Input
10V
V
0V
0V
DD
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
V
Gate body leakage current
Zero gate voltage drain current
ON-state drain current
Static drain-to-source ON-state
resistance
Change in R
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
GS(th)
I
D
(continuous)
10%
change with temperature
480mA
DS(ON)
t
d(ON)
10%
t
(ON)
with temperature
90%
†
t
r
ID (pulsed)
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
J
1.9A
.
(T
90%
t
A
d(OFF)
=25°C unless otherwise specifi ed)
t
(OFF)
t
f
90%
Power Dissipation
10%
250
500
Min
0.8
0.8
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
1.6W
2
A
= 25
300
105
Typ
25
10
25
7
5
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
‡
O
C
Generator
Pulse
Input
Max
-5.0
100
200
100
2.0
1.0
6.0
5.0
3.5
1.7
1.5
10
40
15
25
35
15
R
-
-
-
-
-
GEN
θ
mV/
mmho
%/
JC
Units
mA
µA
nA
pF
ns
ns
Ω
V
V
A
V
(
O
15
O
O
C
C/W) θ
C
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
D
GS
GS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DD
GS
GS
GEN
= 500mA,
JA
= 0V, I
= V
= V
= ±20V, V
= Max rating, V
= 0.8 Max Rating,
= 0V, T
= 4.5V, V
= 10V, V
= 3.0V, I
= 4.5V, I
= 10V, I
= 10V, I
= 25V, I
= 0V, V
= 25V,
= 0V, I
= 0V, I
= 25Ω
(
78
O
V
DS
DS
C/W)
DD
‡
, I
, I
R
D
SD
SD
A
L
D
D
DS
D
D
D
= 250µA
= 125
D
D
DS
= 1.0mA
= 1.0mA
= 500mA
= 500mA
DS
= 250mA
= 500mA
= 500mA
DS
= 25V, f = 1MHz
= 150mA
= 250mA
D.U.T
480mA
= 25V
= 25V
= 0V
I
DR
O
OUTPUT
TN2425
GS
C
†
= 0V
1.9A
I
DRM