TP5322K1 SUTEX [Supertex, Inc], TP5322K1 Datasheet
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TP5322K1
Manufacturer Part Number
TP5322K1
Description
P-Channel Enhancement-Mode Vertical DMOS FET
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
1.TP5322K1.pdf
(2 pages)
Features
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Application
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Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature****
****Distance of 1.6mm from case for 10 seconds.
Ordering Information
**Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
***Same as SOT-23. Products supplied on 3000 piece carrier tape reels.
TP5322N8-G*
TO-243AA**
TP5322N8
Low threshold, -2.4V max.
High input impedance
Low input capacitance, 110pFmax.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces-ideal for TTL and CMOS
Battery operated systems
Photo voltaic devices
Analog switches
General purpose line drivers
Telecom switches
Order Number / Package
TP5322K1-G*
TO-236AB***
TP5322K1
P-Channel Enhancement-Mode
Vertical DMOS FET
BV
BV
-220V
-220V
-55°C to +150°C
DSS
DGS
/
R
(max)
300°C
BV
BV
12Ω
12Ω
±20V
DS(ON)
DGS
DSS
1
V
(max)
-2.4V
-2.4V
GS(th)
General Description
These
transistors utilize an advanced vertical DMOS structure and
Supertex's well-proven silicon-gate manufacturing process. This
combination
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, these devices are
free from thermal runaway and thermally-induced secondary
breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very low
threshold
impedance, low input capacitance, and fast switching speeds are
desired.
Package Options
G
TO-243AA
(SOT-89)*
low
D
(min)
-0.7A
-0.7A
I
voltage,
D(ON)
S
produces
* "Green" Certified Package
threshold
D
high
devices
enhancement-mode
breakdown
Where ✶=2-week alpha date code
Where ✶=2-week alpha date code
Product Marking for SOT-23
Product Marking for SOT-89
with
TO-236AB
G
(SOT-23)*
TP3C✶
Rev. 3
P3C✶
Initial Release
the
voltage,
S
power
TP5322
September 14, 2004
D
(normally-off)
TP5322
high
handling
A042005
input
Related parts for TP5322K1
TP5322K1 Summary of contents
Page 1
... Ordering Information Order Number / Package TO-243AA** TO-236AB*** TP5322N8 TP5322K1 TP5322N8-G* TP5322K1-G* **Same as SOT-89. Product supplied on 2000 piece carrier tape reels. ***Same as SOT-23. Products supplied on 3000 piece carrier tape reels. P-Channel Enhancement-Mode Vertical DMOS FET General Description These transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process ...
Page 2
Thermal Characteristics Package I (continuous) D TO-243AA -0.26A TO-236AB -0.12A *I (continous) is limited by max rated Tj. D **Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substate. Electrical Characteristics Symbol Parameter BV ...