ZXMN6A11G_06 ZETEX [Zetex Semiconductors], ZXMN6A11G_06 Datasheet
ZXMN6A11G_06
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ZXMN6A11G_06 Summary of contents
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ZXMN6A11G 60V SOT223 N-channel enhancement mode MOSFET Summary (BR)DSS DS(on) 0.120 @ V = 10V GS 60 0.180 @ V = 4.5V GS Description This new generation trench MOSFET from Zetex features a unique structure combining ...
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Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...
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Typical characteristics Issue 4 - September 2006 © Zetex Semiconductors plc 2006 ZXMN6A11G 3 www.zetex.com ...
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Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...
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Typical characteristics Issue 4 - September 2006 © Zetex Semiconductors plc 2006 ZXMN6A11G 5 www.zetex.com ...
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Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 4 - September 2006 © Zetex Semiconductors plc 2006 ...
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Issue 4 - September 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN6A11G www.zetex.com ...
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Package outline - SOT223 DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 D 6.30 6.70 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas ...