SUD50N02-06P_06 VISHAY [Vishay Siliconix], SUD50N02-06P_06 Datasheet - Page 2

• Manufacturer Part Number: SUD50N02-06P_06
• Description: N-Channel 20-V (D-S) 175Celsius MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model SUD50N02-06P
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
c
c
b
Parameter
a
c
c
c
c
c
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
C
V
C
C
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
t
t
t
SD
oss
rss
rr
iss
gs
gd
r
f
g
I
V
V
D
V
GS
DS
≅ 50 A, V
GS
I
= 10 V, V
= 10 V, I
F
= 0 V, V
V
V
V
V
= 50 A, di/dt = 100 A/µs
V
DD
Test Condition
DS
I
GS
DS
S
GS
= 10 V, R
= 50 A, V
= V
= 5 V, V
= 4.5 V, I
= 10 V, I
GEN
D
DS
GS
GS
= 20 A, T
, I
= 25 V, f = 1 MHz
= 10 V, R
= 4.5 V, I
D
GS
GS
L
= 250 µA
D
D
= 0.20 Ω
= 20 A
= 10 V
= 20 A
= 0 V
J
G
D
= 125°C
= 2.5 Ω
= 50 A
Simulated
0.0041
0.0057
0.0065
Data
2418
0.91
964
816
348
1.4
7.5
20
11
10
31
6
9
9
Measured
0.0046
0.0073
Data
S-60543Rev. B, 10-Apr-06
2550
900
415
1.2
7.5
19
11
10
24
35
Document Number: 70104
6
9
Unit
nC
pF
ns
Ω
V
A
V