ZXM64P03X_05 ZETEX [Zetex Semiconductors], ZXM64P03X_05 Datasheet
ZXM64P03X_05
Related parts for ZXM64P03X_05
ZXM64P03X_05 Summary of contents
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P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-30V; R =0.075 (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ...
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ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C (a) ...
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ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXM64P03X ...
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ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay ...
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ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXM64P03X ...
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ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 6 ZXM64P03X ...
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PACKAGE DETAILS PACKAGE DIMENSIONS DIM Millimeters MIN MAX MIN A 0.91 1.11 0.036 A1 0.10 0.20 0.004 B 0.25 0.36 0.010 C 0.13 0.18 0.005 D 2.95 3.05 0.116 e 0.65NOM ...