ZXM64N03X_05 ZETEX [Zetex Semiconductors], ZXM64N03X_05 Datasheet - Page 4

• Manufacturer Part Number: ZXM64N03X_05
• Description: 30V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
amb
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
4
MIN.
1.0
4.3
30
TYP.
20.5
24.5
19.1
950
200
4.2
4.5
50
8
MAX. UNIT
0.045
0.060
±100
0.95
4.5
27
1
5
V
µA
nA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ZXM64N03X
CONDITIONS
I
V
I
V
V
V
V
f=1MHz
V
R
(Refer to test circuit)
V
I
(Refer to test circuit)
T
V
T
di/dt= 100A/µs
D
V
D
D
j
j
DS
GS
GS
DS
DS
DD
G
DS
GS
=3.7A
=-250µA, V
=-250µA, V
=25°C, I
=25°C, I
GS
=6.2Ω, R
S E M I C O N D U C T O R S
=30V, V
=10V,I
=25 V, V
=24V,V
=10V, I
=4.5V, I
=0V
=5V, I
=± 20V, V
S
F
D
D
=3.7A,
D
GS
=3.7A,
=-1.9A
=3.7A
D
GS
D
=3.7A
GS
=4.0Ω
=1.9A
GS
DS
=10V,
=0V
DS
=0V,
=0V
= V
=0V
GS