ZXM64N02X_04 ZETEX [Zetex Semiconductors], ZXM64N02X_04 Datasheet

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ZXM64N02X_04

Manufacturer Part Number
ZXM64N02X_04
Description
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - JUNE 2004
DEVICE
ZXM64N02XTA
ZXM64N02XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ZXM4N02
=20V; R
REEL SIZE
(inches)
DS(ON)
13
7
=0.040
TAPE WIDTH (mm)
12mm embossed
12mm embossed
I
D
=5.4A
1
QUANTITY
PER REEL
1000 units
4000 units
G
S
S
S
ZXM64N02X
MSOP8
Top View
D
D
D
D

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ZXM64N02X_04 Summary of contents

Page 1

N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ...

Page 2

ZXM64N02X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C ...

Page 3

Refer Note ( 100ms 10ms 1ms 100us 100m 0 Drain-Source Voltage (V) DS Safe Operating Area Ref Note ( D=0.5 20 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 ...

Page 4

ZXM64N02X ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

V - Drain-Source Voltage (V) DS Output Characteristics 100 VDS=10V 10 T=150°C T=25°C 1 0.1 1 Gate-Source Voltage (V) GS Typical Transfer Characteristics 1 0.1 VGS=2.0V VGS=2.5V VGS=4.5V 0.01 0.1 ...

Page 6

ZXM64N02X 2000 1750 1500 1250 1000 750 500 250 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms ISSUE 1 - JUNE 2004 TYPICAL CHARACTERISTICS 6.0 Vgs=0V I ...

Page 7

ZXM64N02X PACKAGE DIMENSIONS Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 ...

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