ZXMN6A11DN8_06 ZETEX [Zetex Semiconductors], ZXMN6A11DN8_06 Datasheet

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ZXMN6A11DN8_06

Manufacturer Part Number
ZXMN6A11DN8_06
Description
60V SO8 Dual N-channel enhancement mode MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A11D
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
Device
ZXMN6A11DN8TA
V
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC-DC converters
Power management functions
Motor control
(BR)DSS
60
0.180 @ V
0.120 @ V
R
DS(on)
Reel size
(inches)
GS
GS
7
( )
= 4.5V
= 10V
Tape width
(mm)
I
12
D
3.2
2.6
(A)
1
Quantity
per reel
500
G1
S1
D1
G2
G1
S2
S1
Pin out - top view
G2
www.zetex.com
D2
S2
D1
D1
D2
D2

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ZXMN6A11DN8_06 Summary of contents

Page 1

ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary (BR)DSS DS(on) 0.120 @ 0.180 @ V GS Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...

Page 3

Typical characteristics Issue 3 - September 2006 © Zetex Semiconductors plc 2006 ZXMN6A11DN8 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 3 - September 2006 © Zetex Semiconductors plc 2006 ZXMN6A11DN8 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 3 - September 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Issue 3 - September 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 7 ZXMN6A11DN8 www.zetex.com ...

Page 8

Package outline - SO8 DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Europe Americas ...

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