SUD40N08-16_08 VISHAY [Vishay Siliconix], SUD40N08-16_08 Datasheet

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SUD40N08-16_08

Manufacturer Part Number
SUD40N08-16_08
Description
N-Channel 80-V (D-S) 175C MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
b.
Document Number: 71323
S-40272—Rev. C, 23-Feb-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
V
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
DS
ti
80
(V)
t A bi
t
a
a
Ordering Information:
SUD40N08-16
SUD40N08-16—E3 (Lead Free)
G
Top View
TO-252
J
J
0.016 @ V
= 175_C)
= 175_C)
D
Parameter
Parameter
r
DS(on)
N-Channel 80-V (D-S) 175_C MOSFET
S
b
b
GS
(W)
= 10 V
Drain Connected to Tab
A
= 25_C UNLESS OTHERWISE NOTED)
T
Steady State
L = 0.1 mH
T
T
T
t v 10 sec
C
C
C
A
= 125_C
I
= 25_C
= 25_C
= 25_C
D
40
(A)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
thJC
I
I
I
AR
thJA
DS
GS
AR
D
D
S
D
G
stg
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% R
D
S
Typical
0.85
15
40
g
Tested
−55 to 175
Limit
"20
136
80
40
30
60
40
40
80
3 a
b
Maximum
Vishay Siliconix
SUD40N08-16
1.1
18
50
www.vishay.com
Unit
Unit
_C/W
mJ
_C
C/W
W
W
V
V
A
1

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SUD40N08-16_08 Summary of contents

Page 1

... DS DS(on) 80 0.016 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD40N08-16 SUD40N08-16—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b b Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... SUD40N08-16 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Document Number: 71323 S-40272—Rev. C, 23-Feb-04 100 0.04 25_C 0.03 125_C 0.02 0.01 0.00 80 100 iss SUD40N08-16 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current − ...

Page 4

... SUD40N08-16 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0.0 −50 − − Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 100 T − Case Temperature (_C) ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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