ZXM62N03E6TC ZETEX [Zetex Semiconductors], ZXM62N03E6TC Datasheet - Page 4

• Manufacturer Part Number: ZXM62N03E6TC
• Description: 30V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ZXM62N03E6
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - MAY 1999
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
100
30
1.0
1.1
amb
= 25°C
TYP.
380
90
30
2.9
5.6
11.7
6.4
18.8
11.4
MAX.
1
100
0.11
0.15
9.6
1.7
2.8
0.95
unless otherwise stated).
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test
circuit)
V
I
test circuit)
T
V
T
di/dt= 100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=250 A, V
=250 A, V
=2.2A (refer to
=25°C, I
=25°C, I
=6.0 , R
=30V, V
=10V,I
=25 V, V
=24V,V
= 20V, V
=10V, I
=4.5V, I
=0V
=15V, I
S
F
D
D
=2.2A,
GS
=2.2A,
=1.1A
D
D
GS
D
=2.2A
GS
=2.2A
GS
DS
=1.1A
=6.7
=10V,
DS
=0V
=0V,
=0V
= V
=0V
GS