ZXMN6A08E6_06 ZETEX [Zetex Semiconductors], ZXMN6A08E6_06 Datasheet
ZXMN6A08E6_06
Related parts for ZXMN6A08E6_06
ZXMN6A08E6_06 Summary of contents
Page 1
N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY (BR)DSS DS(on) 0.080 @ V = 10V GS 60 0.150 @ V = 4.5V GS DESCRIPTION This new generation trench MOSFET from Zetex features a unique structure combining the benefits ...
Page 2
ZXMN6A08E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V =25°C ( =10V =70°C ( =10V =25°C (a) Pulsed Drain Current (c) Continuous Source ...
Page 3
ISSUE 4 - MAY 2006 CHARACTERISTICS 3 ZXMN6A08E6 ...
Page 4
ZXMN6A08E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...
Page 5
ISSUE 4 - MAY 2006 TYPICAL CHARACTERISTICS 5 ZXMN6A08E6 ...
Page 6
ZXMN6A08E6 TYPICAL CHARACTERISTICS 6 ISSUE 4 - MAY 2006 ...
Page 7
PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES. PACKAGE DIMENSIONS Millimetres Inches DIM Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 ...