ZXMN6A08 ZETEX [Zetex Semiconductors], ZXMN6A08 Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A08
• Description: 60V SOT223 N-channel enhancement mode MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate-body leakage
Gate-source threshold
voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance C
Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(*) (‡)
(‡)
Symbol
V
I
I
V
R
g
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
amb
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
60
1
4
Typ.
44.2
24.1
12.3
0.88
19.2
30.3
459
6.6
2.6
2.1
4.6
4.0
5.8
1.4
1.9
2%.
0.080
0.150
Max.
100
0.5
1.2
Unit
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMN6A08G
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
Tj=25°C, I
di/dt=100A/ s
D
D
D
D
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= 250 A, V
= 250 A, V
= 1.4A
= 1.4A
=25°C, I
≅6.0 , V
= 60V, V
= 15V, I
= 40V, V
= 30V, V
= 30V, V
=±20V, V
= 10V, I
= 4.5V, I
= 30V, I
=0V
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S
S
= 4A,
= 1.4A,
D
GS
D
D
D
GS
GS
GS
GS
= 4.8A
= 4.8A
= 1.5A
DS
GS
DS
= 4.2A
= 10V
=0V
=0V
= 5V
= 10V
=0V
=V
=0V
GS