ZXMN6A07F_07 ZETEX [Zetex Semiconductors], ZXMN6A07F_07 Datasheet

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ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary (BR)DSS DS(on) 0.250 @ V = 10V GS 60 0.350 @ V = 4.5V GS Description This new generation trench MOSFET from Zetex utilizes a unique structure combining ...

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Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...

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Thermal characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A07F 3 www.zetex.com ...

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Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage V Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) ...

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Typical characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A07F 5 www.zetex.com ...

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Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ...

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Package outline - SOT23 leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 C 0.085 0.120 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. ...

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Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...