ZXMN4A06GTC ZETEX [Zetex Semiconductors], ZXMN4A06GTC Datasheet - Page 4

• Manufacturer Part Number: ZXMN4A06GTC
• Description: 40V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN4A06G
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
2% .
4
MIN.
1.0
40
28.61
19.86
16.36
TYP.
2.55
4.45
7.35
18.2
770
8.7
2.1
4.5
0.8
92
61
MAX.
0.050
0.075
0.95
100
1
UNIT
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test circuit)
V
I
(refer to test circuit)
T
V
T
di/dt= 100A/ s
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=250 A, V
=250 A, V
=2.5A
=25°C, I
=25°C, I
=6.0 , V
=40V, V
=15V,I
=40 V, V
=30V,V
= 20V, V
=10V, I
=4.5V, I
=0V
=30V, I
ISSUE 1 - MAY 2002
CONDITIONS.
D
S
F
D
GS
=2.5A
=2.5A,
D
GS
=2.5A,
GS
D
=4.5A
GS
GS
DS
=2.5A
=3.2A
DS
=10V,
=0V
=10V
=0V,
= V
=0V
=0V
GS