ZXMN2A04DN8_04 ZETEX [Zetex Semiconductors], ZXMN2A04DN8_04 Datasheet - Page 4

• Manufacturer Part Number: ZXMN2A04DN8_04
• Description: DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1) Measured under pulsed conditions. Width=300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN2A04DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
A
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
2% .
4
MIN.
0.7
20
1880
TYP.
14.8
50.5
30.6
22.1
40.5
0.85
18.0
506
386
7.9
5.6
8.0
8.9
40
MAX. UNIT CONDITIONS
0.025
0.035
0.95
100
0.5
ns
nC
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
J
J
ISSUE 1 - JULY 2004
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=250 A, V
=250 A, V
=3.5A
=5.9A
GS
=25°C, I
=25°C, I
≅6 , V
=20V, V
=4.5V, I
=2.5V, I
=10V,I
=10V, V
=15V,V
=10V,V
=0V
=10V, I
= 12V, V
GS
D
S
F
GS
GS
=1.9A,
=5.9A
D
=5.1A,
GS
D
D
GS
=5V
GS
DS
=1A
=5.9A
=5A
=5V,
=4.5V,
=0V
DS
=0V,
=0V
= V
=0V
GS