ZXMC3A18DN8_05 ZETEX [Zetex Semiconductors], ZXMC3A18DN8_05 Datasheet - Page 4

• Manufacturer Part Number: ZXMC3A18DN8_05
• Description: COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

N-Channel
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMC3A18DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300ms; Duty cycle
4
30
1.0
MIN.
17.5
1800
289
178
5.5
8.7
33
8.5
19.4
36
5.5
7.0
20.5
41.5
TYP.
2%.
0.5
100
0.025
0.030
0.95
MAX. UNIT CONDITIONS
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
GS
DS
DS
GS
= 250 A, V
= 250 A, V
= 3.5A
= 3.5A
=25°C, I
=25°C, I
≅ 6.0 ,
=30V, V
= 15V, I
= 25V, V
= 15V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 15V, I
=0V
= 10V
ISSUE 1 - MAY 2005
S
F
= 6A,
= 6A,
D
D
GS
D
D
GS
GS
GS
= 5.8A
= 5.8A
=6A
GS
DS
DS
= 5.3A
=0V
=0V
= 5V
= 10V
=V
=0V
=0V
GS