ZXMN2A01E6_06 ZETEX [Zetex Semiconductors], ZXMN2A01E6_06 Datasheet
ZXMN2A01E6_06
Related parts for ZXMN2A01E6_06
ZXMN2A01E6_06 Summary of contents
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N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V = 20V 0.12 (BR)DSS DS(ON) DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes ...
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ZXMN2A01E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V =25°C ( =10V =70°C ( =10V =25°C (a) Pulsed Drain Current (c) Continuous Source ...
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ISSUE 3 - FEBRUARY 2006 CHARACTERISTICS 3 ZXMN2A01E6 ...
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ZXMN2A01E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...
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ISSUE 3 - FEBRUARY 2006 TYPICAL CHARACTERISTICS 5 ZXMN2A01E6 ...
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ZXMN2A01E6 400 C ISS C 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage TYPICAL CHARACTERISTICS 4 4 1MHz 3.5 3.0 2.5 2.0 ...
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PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 ...