SI7840BDP VISHAY [Vishay Siliconix], SI7840BDP Datasheet

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SI7840BDP

Manufacturer Part Number
SI7840BDP
Description
Si7840BDP vs. Si7840DP Specification Comparison
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Part Number
Manufacturer
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Part Number:
SI7840BDP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Complete
Documents
PDF
CHARACTERISTICS
DESCRIPTION
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73244
04-Dec-04
The
characteristics of the n-channel vertical DMOS.
model is
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
attached
Expanded Features
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extracted and optimized over the
Unlimited Pages
spice
N-Channel 30-V (D-S) Fast Switching MOSFET
model
describes
the
typical
55 to 125 C
The subcircuit
electrical
SPICE Device Model Si7840BDP
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
Apply for both Linear and Switching Application
Accurate over the 55 to 125 C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
gd
model. All model parameter values are optimized
Vishay Siliconix
www.vishay.com
1

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SI7840BDP Summary of contents

Page 1

... This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73244 04-Dec-04 SPICE Device Model Si7840BDP Apply for both Linear and Switching Application Accurate over the 55 to 125 C Temperature Range Model the Gate Charge, Transient, and Diode Reverse Recovery ...

Page 2

... Click Here & Upgrade Expanded Features PDF Unlimited Pages Documents Complete SPICE Device Model Si7840BDP Vishay Siliconix SPECIFICATIONS ( UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...

Page 3

... Click Here & Upgrade Expanded Features PDF Unlimited Pages Documents Complete COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 73244 04-Dec-04 SPICE Device Model Si7840BDP =25 C UNLESS OTHERWISE NOTED) J Vishay Siliconix www.vishay.com 3 ...

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