SIB457EDK VISHAY [Vishay Siliconix], SIB457EDK Datasheet - Page 4

• Manufacturer Part Number: SIB457EDK
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SiB457EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
8
6
4
2
0
1
0.0
- 50
0
Soure-Drain Diode Forward Voltage
- 25
I
D
= 6.8 A
5
V
0.3
SD
Q
0
V
g
DS
- Source-to-Drain Voltage (V)
Threshold Voltage
- Total Gate Charge (nC)
T
V
J
= 10 V
DS
Gate Charge
I
T
D
25
- Temperature (°C)
10
J
= 250 µA
= 5 V
= 150 °C
0.6
50
15
75
V
DS
T
0.9
100
J
= 16 V
= 25 °C
20
125
1.2
150
25
0.15
0.12
0.09
0.06
0.03
0.00
0.01
100
20
15
10
0.1
10
5
0
0.001
1
0.1
0
I
D
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
On-Resistance vs. Gate-to-Source Voltage
Single Pulse
= 1.5 A; T
T
I
Single Pulse Power, Junction-to-Ambient
D
GS
A
T
J
= 4.8 A;
= 25 °C
0.01
= 25 °C
> minimum V
V
1
DS
V
GS
J
- Drain-to-Source Voltage (V)
DS(on)
= 25 °C
- Gate-to-Source Voltage (V)
0.1
1
*
2
GS
BVDSS Limited
I
D
Pulse (s)
I
at which R
D
= 1.5 A; T
= 4.8 A; T
S09-1497-Rev. B, 10-Aug-09
1
Document Number: 64816
3
DS(on)
J
10
10
= 125 °C
J
= 125 °C
is specified
100 µs
1 ms
10 ms
1 s, 10 s
100 ms
DC
4
100
100
1000
5