SIB455EDK VISHAY [Vishay Siliconix], SIB455EDK Datasheet - Page 4

• Manufacturer Part Number: SIB455EDK
• Description: P-Channel 12-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SiB455EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
0.00
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
- 50
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
I
D
- 25
- 25
= 5.6 A; T
V
1
GS
V
GS
T
0
0
= 1.8 V; I
J
J
- Gate-to-Source Voltage (V)
V
- Junction Temperature (°C)
Threshold Voltage
= 25 °C
T
GS
I
J
D
25
25
I
- Temperature (°C)
D
= 1.5 A; T
= 4.5 V, 2.5 V; I
2
= 250 µA
D
I
= 1.5 A
D
50
50
V
= 1.5 A; T
GS
J
I
D
= 1.5 V; I
= 25 °C
3
= 5.6 A; T
75
75
D
J
= 5.6 A
= 125 °C
100
100
D
= 1.5 A
J
4
= 125 °C
125
125
150
150
5
100
0.01
100
0.1
20
10
15
10
0.1
10
5
0
0.001
1
1
0.1
0.0
* V
Safe Operating Area, Junction-to-Ambient
Single Pulse
Single Pulse Power, Junction-to-Ambient
T
GS
Limited by R
A
Soure-Drain Diode Forward Voltage
0.2
0.01
= 25 °C
> minimum V
V
V
DS
SD
- Drain-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
0.4
0.1
1
DS(on)
T
BVDSS Limited
GS
J
= 150 °C
Pulse (s)
*
at which R
0.6
S09-2682-Rev. A, 14-Dec-09
1
Document Number: 65599
10
0.8
DS(on)
T
10
J
= 25 °C
100 µs
10 ms
100 ms
1 ms
1 s, 10 s
DC
is specified
1.0
100
100
1.2
1000