SIB408DK VISHAY [Vishay Siliconix], SIB408DK Datasheet - Page 4

• Manufacturer Part Number: SIB408DK
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SiB408DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.4
- 0.7
- 1.0
0.001
- 0.1
0.01
0.5
0.2
100
0.1
10
- 50
1
0.0
- 25
Soure-Drain Diode Forward Voltage
0.2
V
SD
0
T
Threshold Voltage
J
- Source-to-Drain Voltage (V)
T
0.4
= 150 °C
J
25
- Temperature (°C)
50
0.6
T
J
= 25 °C
75
I
D
0.8
= 250 µA
0.001
0.01
100
0.1
100
10
T
1
0.1
J
= - 50 °C
I
D
1.0
Safe Operating Area, Junction-to-Ambient
= 5 mA
125
Limited by R
* V
GS
Single Pulse
T
> minimum V
A
150
1.2
V
= 25 °C
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
BVDSS
Limited
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
20
15
10
5
0
0
0 .
is specified
0
0
1
On-Resistance vs. Gate-to-Source Voltage
I
10 µs
100 µs
1 ms
10 ms
100 ms
100 s, DC
Single Pulse Power, Junction-to-Ambient
1 s, 10 s
D
1
= 6 A
2
100
V
0.01
GS
T
J
3
- Gate-to-Source Voltage (V)
= 25 °C
4
Time (s)
0.1
5
S09-0859-Rev. A, 18-May-09
Document Number: 64828
6
7
T
J
1
= 125 °C
8
9
10
1
0