SIB406EDK VISHAY [Vishay Siliconix], SIB406EDK Datasheet - Page 4

• Manufacturer Part Number: SIB406EDK
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SiB406EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.1
10
10
8
6
4
2
0
1
- 50
0.0
0
- 25
I
D
Source-Drain Diode Forward Voltage
0.2
= 5.1 A
T
V
J
SD
2
0
= 150 °C
Q
0.4
g
- Source-to-Drain Voltage (V)
Threshold Voltage
T
- Total Gate Charge (nC)
V
J
DS
25
- Temperature (°C)
Gate Charge
0.6
= 10 V
I
D
= 250 µA
50
4
0.8
75
T
J
V
= 25 °C
DS
1.0
100
= 16 V
6
1.2
125
New Product
150
1.4
8
0.20
0.16
0.12
0.08
0.04
0.00
1.7
1.5
1.3
1.1
0.9
0.7
0.5
30
25
20
15
10
5
0
0.001
- 50
0
On-Resistance vs. Gate-to-Source Voltage
I
Single Pulse Power (Junction-to-Ambient)
D
= 2 A
On-Resistance vs. Junction Temperature
I
- 25
D
= 3.9 A
0.01
1
V
GS
V
T
0
GS
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
0.1
= 4.5 V, 2.5 V
25
2
Pulse (s)
50
1
S-83095-Rev. A, 29-Dec-08
Document Number: 69088
3
75
10
100
T
T
J
J
= 25 °C
4
= 125 °C
100
125
1000
150
5