SIB404DK VISHAY [Vishay Siliconix], SIB404DK Datasheet
SIB404DK
Related parts for SIB404DK
SIB404DK Summary of contents
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... 1. Ordering Information: SiB404DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SiB404DK Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...
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... GS 0 1.5 2.0 1200 1000 800 600 400 V = 4.5 V 200 1.6 1 1.0 0.8 0 SiB404DK Vishay Siliconix = 25 ° 125 ° ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS ...
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... SiB404DK Vishay Siliconix TYPICAL CHARACTERISTICS (T 100 = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.7 0.6 0.5 0 250 μA D 0.3 0.2 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product = 25 °C, unless otherwise noted) A 0.06 0.05 0.04 0. °C J 0.02 0.01 0.00 0.8 1.0 1 100 ...
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... Document Number: 67099 S11-0236-Rev. A, 14-Feb-11 New Product = 25 °C, unless otherwise noted 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB404DK Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...
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... SiB404DK Vishay Siliconix TYPICAL CHARACTERISTICS (T 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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PowerPAK SC75-6L PIN1 PIN6 K3 BACKSIDE VIEW OF SINGLE SINGLE PAD DIM MILLIMETERS Min Nom Max A 0.675 0.75 0. 0.05 b 0.18 0.25 0.33 C 0.15 0.20 0.25 D 1.53 1.60 1.70 D1 0.57 0.67 ...
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RECOMMENDED PAD LAYOUT FOR PowerPAK 0.250 (0.01) 0.300 (0.012) (0.043) 1.700 (0.067) 1.100 0.300 (0.012) Return to Index Document Number: 70488 Revision: 21-Jan-08 ® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.400 (0.016) 0.370 (0.015) 0.200 (0.008) 0.545 (0.021) 1 0.250 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...