2N5551-A-AB3-B UTC [Unisonic Technologies], 2N5551-A-AB3-B Datasheet - Page 2

• Manufacturer Part Number: 2N5551-A-AB3-B
• Description: HIGH VOLTAGE SWITCHING TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

2N5551
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Note: Pulse test: PW<300µs, Duty cycle<2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Dissipation
Collector Current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
FE
SYMBOL
V
V
BV
BV
BV
80-170
CE(SAT)
BE(SAT)
I
h
h
h
I
C
NF
CBO
EBO
FE1
FE2
FE3
f
A
T
CBO
CEO
EBO
ob
I
I
I
V
V
V
V
V
I
I
I
I
V
V
I
R
C
C
E
C
C
C
C
C
(Ta=25℃, unless otherwise specified)
CB
BE
CE
CE
CE
CE
CB
=10µA, I
S
=100µA, I
=1mA, I
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=0.25mA, V
(Ta=25℃, unless otherwise specified)
=1kΩ, f=10Hz ~ 15.7kHz
=4V,I
=120V, I
=5V, I
=5V, I
=5V, I
=10V, I
=10V, I
TO-92
SOT-89
TEST CONDITIONS
C
B
C
C
C
=0
C
=0
=1mA
=10mA
=50mA
B
B
B
B
C
E
=0
E
=1mA
=5mA
=1mA
=5mA
=0 f=1MHz
=10mA, f=100MHz
E
=0
=0
CE
SYMBOL
=5V
V
V
V
T
P
T
CBO
CEO
EBO
I
STG
C
C
J
150-240
B
NPN SILICON TRANSISTOR
MIN
180
160
100
-55 ~ +150
RATINGS
80
80
80
6
+150
180
160
625
500
600
6
TYP
160
200-400
C
MAX
0.15
400
300
0.2
6.0
50
50
1
1
8
QW-R201-002.B
UNIT
mW
mW
mA
℃
℃
2 of 4
V
V
V
UNIT
MHz
nA
nA
dB
pF
V
V
V
V
V