2N7002-G_12 COMCHIP [Comchip Technology], 2N7002-G_12 Datasheet

2N7002-G_12

Manufacturer Part Number

2N7002-G_12

Description

MOSFET

Manufacturer

COMCHIP [Comchip Technology]

Datasheet

1.2N7002-G_12.pdf (4 pages)

Current page: 1 of 4
Download datasheet (117Kb)

2N7002-G

RoHS Device

QW-BTR12

Features

Equivalent Circuit

MOSFET

Maximum Ratings

Electrical Characteristics

Drain-Source voltage

Drain current

Power dissipation

Junction and storage temperature

Drain-Source breakdown voltage

Gate-Threshold voltage

Gate-body leakage

Zero gate voltage drain current

On-state drain current

Drain-Source on resistance

Forward tran conductance

Diode forward voltage

Total gate charge

Gate-Source charge

Gate-Drain charge

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Power dissipation : 0.35W

Parameter

(N-Channel)

(at T

Symbol

G : Gate

S : Source

D : Drain

, T

=25°C)

STG

=200mA, V

=100mA, V

=10Ω

=0V, I

=0V, V

=60V, V

=10V, V

=4.5V, V

=10V, I

=4.5V, I

=15V, I

=30V, V

=25V, V

=30V, R

(at TA=25°C unless otherwise noted)

Comchip Technology CO., LTD.

-55 ~ +150

, I

Value

=10μA

250

350

=250μA

=250mA

=200mA

Conditions

=15V

=200mA

=200Ω

GEN

=0V

=0V, T

=7.5V

=10V, I

=0V, f=1MHz

=10V

=0V

=10V

=125°C

=250mA

Unit

°C

Symbol

(BR)DSS

DS(ON)

D(ON)

th(GS)

d(ON)

d(off)

GSS

DSS

OSS

rSS

0.044(1.10)

0.035(0.90)

iss

0.056(1.40)

0.047(1.20)

Dimensions in inches and (millimeter)

0.020(0.50)

0.013(0.35)

Min

800

500

SOT-23

0.083(2.10)

0.066(1.70)

0.119(3.00)

0.110(2.80)

0.006(0.15)max

1300

0.85

0.06

Typ

700

300

1.5

2.0

0.6

1.2

7.5

0.007(0.20)min

0.103(2.60)

0.086(2.20)

Max

500

2.5

1.2

1.0

0.006(0.15)

0.002(0.05)

Unit

Page 1

REV:B

μA

Related parts for 2N7002-G_12

2N7002-G_12 Summary of contents

Page 1

... MOSFET 2N7002-G (N-Channel) RoHS Device Features Power dissipation : 0.35W Equivalent Circuit Gate S : Source Drain S Maximum Ratings (at T =25°C) A Symbol Parameter Drain-Source voltage V DS Drain current I D Power dissipation P D Junction and storage temperature Electrical Characteristics Parameter Drain-Source breakdown voltage ...

Page 2

... MOSFET RATING AND CHARACTERISTIC CURVES (2N7002-G) Fig.1 On-Region Characteristics 1.0 V =10V GS 9.0V 8.0V 7.0V 0.8 6.5V 6.0V 4.5V 4.0V 3.5V 0.6 3.0V 2.5V 2.0/1.0V 0.4 0 Drain-Source Voltage(V) DS Fig.3 On-Resistance vs Junction Temperature 2.0 1.5 V =10V, I =0. 1.0 0.5 0 -55 - Junction Temperature ( C) J QW-BTR12 Fig.2 On-Resistance vs Drain Current 5. Fig.4 On-Resistance vs Gate-Source Voltage ...

Page 3

MOSFET Reel Taping Specification Trailer ....... End ....... 10 pitches (min) A SYMBOL (mm) SOT-23 3.10 ± 0.10 (inch) ± 0.122 0.004 E SYMBOL (mm) SOT-23 1.75 ± 0.10 (inch) ± 0.069 0.004 QW-BTR12 ...

Page 4

... MOSFET Marking Code Marking Code Part Number 2N7002-G 7002 Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 Standard Packaging REEL PACK Case Type REEL ( pcs ) 3,000 SOT-23 QW-BTR12 7002 1 A Reel Size (inch) 7 Comchip Technology CO., LTD REV:B ...

Related keywords

2N7002-G_12 datasheet
2N7002-G_12 data sheet
2N7002-G_12 pdf datasheet
2N7002-G_12 component
2N7002-G_12 part
2N7002-G_12 distributor
2N7002-G_12 RoHS
2N7002-G_12 datasheet download