2N7002M JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd], 2N7002M Datasheet

2N7002M

Manufacturer Part Number

2N7002M

Description

MOSFET( N-Channel )

Manufacturer

JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Datasheet

1.2N7002M.pdf (4 pages)

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DESCRIPTION

High cell density, DMOS technology. These products have been designed to

minimize on-state resistance while provide rugged, reliable, and fast switching

performance. They can be used in most applications requiring up to 400mA DC

and can deliver pulsed currents up to 2A. These products are particularly suited

for low voltage, low current applications such as small servo motor control, power

MOSFET gate drivers, and other switching applications.

FEATURES

High density cell design for low RDS(ON).

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

APPLICATION

N-Channel Enhancement Mode Field Effect Transistor

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING: 72

MAXIMUM RATINGS* T

stg

2N7002M

Symbol

Drain-Source voltage

Drain Current

Power Dissipation

Thermal Resistance. Junction to Ambient Air

Junction Temperature

Storage Temperature

MOSFET( N-Channel )

=25 ℃ unless otherwise noted

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03B Plastic-Encapsulate MOSFET

Parameter

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

1. GATE

2. SOURCE

3. DRAIN

-55-150

Value

150

625

150

115

BACK

TOP

Units

℃/W

℃

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2N7002M Summary of contents

Page 1

... JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M MOSFET( N-Channel ) DESCRIPTION High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents ...

Page 2

ELECTRICAL CHARACTERISTICS(Ta=25 ℃ Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current* Drain-Source On-Resistance* Drain-Source On- Voltage * Forward Tran conductance* Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance * Pulse ...

Page 3

... Typical Characteristics 2N7002M ...

Page 4

illim ...

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