2N5114_TO-18 MICROSS [Micross Components], 2N5114_TO-18 Datasheet
2N5114_TO-18
Manufacturer Part Number
2N5114_TO-18
Description
P-CHANNEL JFET
Manufacturer
MICROSS [Micross Components]
Datasheet
1.2N5114_TO-18.pdf
(1 pages)
2N5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
2N5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
2N5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
2N5114 SWITCHING CIRCUIT PARAMETERS
2N5114 Benefits:
Micross Components Europe
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).
2N5114 Applications:
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5114 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
SYMBOL
SYMBOL
SYMBOL
V
V
r
r
BV
V
I
t
t
I
DS(on)
DS(on)
V
GS(off)
DS(on)
I
I
D(off)
C
V
D(on)
C
d(on)
d(off)
g
GS(F)
g
e
R
DSS
GSS
R
I
t
t
G
iss
rss
DD
GG
os
GSS
fs
r
f
n
G
L
Low On Resistance
I
Switches directly from TTL logic
Analog Switches
Commutators
Choppers
D(off)
Click To Buy
Linear Systems replaces discontinued Siliconix 2N5114
≤ 500 pA
Drain to Source Saturation Current (Note 2)
‐15mA
Gate to Source Breakdown Voltage
430Ω
100Ω
‐10V
20V
Gate to Source Forward Voltage
Drain to Source On Resistance
Drain to Source On Resistance
Gate to Source Cutoff Voltage
Reverse Transfer Capacitance
Drain to Source On Voltage
Forward Transconductance
Turn On Rise Time
Turn Off Fall Time
Equivalent Noise Voltage
CHARACTERISTIC
Gate Operating Current
Turn Off Time
Gate Reverse Current
Turn On Time
Output Conductance
Drain Cutoff Current
Input Capacitance
CHARACTERISTIC
CHARACTERISTIC
Tel: +44 1603 788967
Email:
Web:
Available Packages:
2N5114 in TO-18
2N5114 in bare die.
Please contact Micross for full
package and die dimensions
http://www.micross.com/distribution
chipcomponents@micross.com
P-CHANNEL JFET
10
15
6
6
2N5114
MIN
MIN
‐30
30
UNITS
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
4
ns
TYP.
TYP.
‐0.7
‐1.0
‐0.7
‐0.5
‐10
‐10
‐10
4.5
20
20
20
‐5
‐‐
‐‐
‐‐
‐‐
‐‐
5
5
6
6
TO-18 (Bottom View)
MAX
MAX
‐500
‐1.3
500
‐90
10
75
75
25
‐1
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
7
nV/√Hz
UNITS
UNITS
mA
mS
pA
µS
pF
V
Ω
Ω
See Switching Circuit
CONDITIONS
V
V
GS
GS
(L) = ‐11V
(H) = 0V
V
V
V
V
DG
DS
V
V
I
DS
D
DS
DS
DS
= ‐15V, I
= 10V, I
= 0A, V
= ‐15V, V
= 0V, V
V
= 0V, V
= 0V, V
V
V
V
I
I
SWITCHING TEST CIRCUIT
V
V
V
V
V
V
DS
I
G
D
DS
DS
GS
G
DS
DS
DS
GS
GS
GS
= ‐1mA, V
= ‐1mA, V
= ‐15V, I
= 1µA, V
= ‐15V, V
= ‐15V, I
= 0V, I
= ‐18V, V
= ‐15V, V
= ‐15V, V
CONDITIONS
CONDITIONS
= 0V, I
= 0V, I
= 20V, V
GS
GS
D
GS
GS
D
= 10mA , f = 1kHz
GS
= 1mA , f = 1kHz
= 0V, f = 1kHz
= 12V, f = 1MHz
‐55°C to +200°C
‐55°C to +200°C
= 7V, f = 1MHz
= 5V, f = 1MHz
D
= 0V, f = 1MHz
D
D
r
= ‐15mA
I
V
= ‐7mA
= ‐3mA
V
DS(on)
D
D
G
DS
GS
500mW
DS
= ‐1mA
= ‐50mA
GDS
GSS
= ‐1nA
DS
GS
GS
GS
GS
= 0V
= 0V
= 12V
6pF
= 0V
= 0V
= 0V
= 7V
= 5V
= 30V
= 30V
≤ 75Ω