2SC4445_01 SANKEN [Sanken electric], 2SC4445_01 Datasheet
2SC4445_01
Manufacturer Part Number
2SC4445_01
Description
Silicon NPN Triple Diffused Planar Transistor
Manufacturer
SANKEN [Sanken electric]
Datasheet
1.2SC4445_01.pdf
(1 pages)
h
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
106
Symbol
V
V
V
I
I
P
Tj
T
F E
5 0
1 0
Absolute maximum ratings
C
B
Typical Switching Characteristics (Common Emitter)
0 . 0 5
stg
CBO
CEO
EBO
C
5
2
V
250
0 . 0 1
(V)
0 . 5
0 . 1
– I
10
CC
5
1
3
2
1
0
5
0
I
C
Safe Operating Area (Single Pulse)
C
Temperature Characteristics (Typical)
– V
1 0
C E
C o l l e c to r - E m i t te r V o l ta g e V
C o l l e c to r - E m i t te r V o l ta g e V
Without Heatsink
Natural Cooling
60(Tc=25°C)
–55 to +150
357
(Ω)
R
0 .0 5
Characteristics (Typical)
1
3(
Ratings
L
C o l l e ct o r C u r re n t I
Pulse
900
800
150
1.5
7
1 2 5 ˚ C
– 5 5 ˚ C
2 5 ˚ C
0 . 1
6)
5 0
0.7
(A)
I
C
2
1 0 0
(Ta=25°C)
C
Unit
( A )
0 .5
°C
°C
W
A
A
V
V
V
V
2SC4445
(V)
10
C E
3
C E
BB1
(V )
( V)
1
5 00
(V
C E
=4V )
100 0
I
I
V
h
V
V
f
C
V
CBO
EBO
T
4
Electrical Characteristics
FE
(V)
(BR)CEO
CE
BE
–5
OB
BB2
Symbol
3
(sat)
(sat)
0.5
0.1
0 .0 5
V
7
5
1
0.1
0.5
0.1
CE
10
0.1
(A)
I
2
1
0
0.01
5
1
t
V
I
B1
(sat),V
C
5
on
C C
Reverse Bias Safe Operating Area
:I
B1
•t
V
I
I
V
:–I
250V
V
C
C
CE
10
CB
stg
=0.7A, I
=0.7A, I
CE
BE
B 2
Without Heatsink
Natural Cooling
L=3mH
I
Duty:less than 1%
B2
=12V, I
C oll ec tor - Em itter Vol tage V
=10V, f=1MHz
Conditions
= 10:1.5:5
=–1.0A
V
(sat) – I
=4V, I
•t
I
–0.35
C
CB
V
0.05
(A)
I
=10mA
f
EB
B2
– I
C ol lector C ur r ent I
=800V
C ol l ec tor C ur r ent I
=7V
B
B
C
C
C
E
=0.14A
=0.14A
Temperature Characteristics (Typical)
=0.7A
=–0.3A
Characteristics (Typical)
0.1
t
o n
50
0.7
( s)
t
on
max
0.5
100
t
V
f
C
B E
0.5
C
( A)
(A )
(s at)
100
100
800
10 to 30
Ratings
0.5
1.2
4
15
50
( s)
C E
t
t
max
stg
V
s tg
(V )
1
max
max
min
max
max
typ
typ
C E
1
( I
(sat)
500
C
/I
(Ta=25°C)
B
=5)
0.7
1000
3
( s)
Application : Switching Regulator and General Purpose
MHz
Unit
t
max
pF
f
2
V
V
V
A
A
0.5
0.3
4
1
I
3.5
C
60
40
20
1
External Dimensions FM100(TO3PF)
0
3
2
1
0
– V
0
0
P c – Ta Derating
W i thout Heatsi nk
j- a
BE
– t Characteristics
0.2
Temperature Characteristics (Typical)
5.45
A mbi ent Tem perature Ta(˚ C)
Bas e- Em i ttor Vol tage V
±0.1
1.5
a
b
B
10
0.4
50
15.6
Ti me t(m s )
4.4
C
±0.2
0.6
1.5
E
5.45
1.05
1.75
2.15
ø3.3
±0.1
Weight : Approx 6.5g
a. Part No.
b. Lot No.
100
+0.2
-0.1
0.8
±0.2
100
B E
0.65
( V)
+0.2
-0.1
1.0
( V
5.5
3.45
C E
±0.2
=4V )
±0.2
3.35
0.8
150
1.2
1000
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