2SC3279_11 SECOS [SeCoS Halbleitertechnologie GmbH], 2SC3279_11 Datasheet
2SC3279_11
Manufacturer Part Number
2SC3279_11
Description
NPN Plastic Encapsulated Transistor
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.2SC3279_11.pdf
(2 pages)
http://www.SeCoSGmbH.com/
18-Feb-2011 Rev. B
FEATURES
CLASSIFICATION OF h
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Collector Output Capacitance
Transition Frequency
Product-Rank 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
High DC current gain and excellent h
Low saturation voltage.
Range
Elektronische Bauelemente
Parameter
Parameter
140~240
FE
200~330
A suffix of “-C” specifies halogen & lead-free
FE
(T
Symbol
V
V
V
V
A
(T
linearity.
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
V
h
C
CBO
EBO
= 25° C unless otherwise specified)
300~450
f
FE
A
BE
ob
T
= 25° C unless otherwise specified)
RoHS Compliant Product
Symbol
T
J
V
V
V
, T
P
CBO
CEO
EBO
I
C
C
STG
Min.
140
30
10
6
-
-
-
-
-
-
420~600
Typ.
150
27
-
-
-
-
-
-
-
-
150, -55~150
NPN Plastic Encapsulated Transistor
Max.
Rating
0.82
600
0.1
0.1
1.5
-
-
-
-
-
0.75
30
10
6
2
G
K
E
Unit
MHz
µA
µA
pF
V
V
V
V
V
2SC3279
A
Any changes of specification will not be informed individually.
2A , 30V
I
I
I
V
V
V
I
V
V
V
C
C
E
C
=1mA, I
CB
EB
CE
CE
CB
CE
=1mA, I
=10mA, I
=2A, I
Base
=6V, I
H
J
B
C
=30V, I
=1V, I
=1V, I
=10V, I
=1V, I
3
B
Test Conditions
D
F
=100mA
C
C
C
C
E
C
=0
=500mA
=2A
=0.5A
=0
=0
E
E
B
=0
=0, f=1MHz
=0
TO-92
Collector
Emitter
Unit
° C
W
1
V
V
V
A
2
1 1 1 1 Emitter
2 2 2 2 Collector
3 3 3 3 Base
REF.
C
D
G
H
A
B
E
F
K
J
Page 1 of 2
12.70
Min.
4.40
4.30
3.30
0.36
0.36
1.10
2.42
0.36
Millimeter
1.27 TYP.
Max.
4.70
4.70
3.81
0.56
0.51
2.66
0.76
-
-
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2SC3279_11 Summary of contents
Page 1
Elektronische Bauelemente FEATURES High DC current gain and excellent h Low saturation voltage. CLASSIFICATION Product-Rank 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P Range 140~240 ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage ...
Page 2
Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 18-Feb-2011 Rev. B 2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page ...