2SC4408_07 TOSHIBA [Toshiba Semiconductor], 2SC4408_07 Datasheet - Page 2

• Manufacturer Part Number: 2SC4408_07
• Description: Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Characteristics
C4408
Turn-on time
Storage time
Fall time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
V
Symbol
(BR) CEO
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
CBO
EBO
C
t
t
stg
f
on
t
T
ob
f
V
V
I
V
V
I
I
V
V
I
C
C
C
B1
CB
EB
CE
CE
CE
CB
= 10 mA, I
= 1 A, I
= 1 A, I
= −I
= 80 V, I
= 6 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 10 V, I
20 μs
2
B2
B
B
= 0.05 A, duty cycle ≤ 1%
= 0.05 A
= 0.05 A
C
C
C
C
Test Condition
B
E
C
= 0
= 100 mA
= 1.5 A
= 100 mA
= 0
Input
= 0
= 0, f = 1 MHz
I
I
B1
B2
Output
30 V
120
Min
50
40
―
―
―
―
―
―
―
―
―
Typ.
100
0.1
0.5
0.1
14
―
―
―
―
―
―
―
2006-11-10
2SC4408
Max
400
1.0
1.0
0.5
1.2
―
―
―
―
―
―
―
MHz
Unit
μA
μA
pF
μs
V
V
V