2SC4308TZ-E RENESAS [Renesas Technology Corp], 2SC4308TZ-E Datasheet - Page 3

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2SC4308TZ-E

Manufacturer Part Number
2SC4308TZ-E
Description
Silicon NPN Epitaxial Planar
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
2SC4308
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 5
1,000
0.01
600
400
200
100
1.0
0.1
10
0
Maximum Collector Dissipation Curve
1
1
I
Pulse Test
C
Ambient Temperature Ta (°C)
Collector to Emitter Saturation
DC Current Transfer Ratio vs.
Voltage vs. Collector Current
= 10 I
Collector Current I
Collector Current I
B
Collector Current
10
10
50
25
25
Ta = 75°C
–25
100
100
100
–25
Ta = 75°C
C
C
V
Pulse Test
(mA)
(mA)
CE
= 5 V
1,000
1,000
150
10,000
1,000
200
100
100
1.0
0.1
10
0
Collector to Emitter Voltage V
1
1
Typical Output Characteristics
Gain Bandwidth Product vs.
Base to Emitter Voltage vs.
Collector Current I
Collector Current I
Collector Current
Collector Current
10
10
25
1.0
100
100
C
C
Ta = –25°C
V
Pulse Test
V
(mA)
(mA)
CE
75
CE
0.5mA
= 5 V
I
CE
= 5 V
B
2.0
1.5
0.1
= 0
1,000
1,000
(V)
2.0

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