2SC3265_03 TOSHIBA [Toshiba Semiconductor], 2SC3265_03 Datasheet

no-image

2SC3265_03

Manufacturer Part Number
2SC3265_03
Description
Low Frequency Power Amplifier Applications Power Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Low Frequency Power Amplifier Applications
Power Switching Applications
·
·
·
Maximum Ratings
Electrical Characteristics
Marking
High DC current gain: h
Low saturation voltage: V
Complementary to 2SA1298
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
FE (1)
Characteristics
Characteristics
classification O: 100~200, Y: 160~320
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
(Ta = = = = 25°C)
FE (1)
(I
CE (sat)
C
= 500 mA, I
= 100~320
(Ta = = = = 25°C)
= 0.4 V (max)
V
V
V
Symbol
Symbol
(BR) CEO
(BR) EBO
h
h
V
V
V
CE (sat)
I
I
T
FE (1)
FE (2)
V
CBO
C
EBO
P
CBO
CEO
EBO
I
I
T
f
stg
BE
C
B
T
ob
B
C
2SC3265
j
(Note)
= 20 mA)
V
V
I
I
V
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CE
CB
= 0.1 mA, I
= 10 mA, I
= 500 mA, I
-55~150
Rating
= 5 V, I
= 30 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 5 V, I
= 10 V, I
800
160
200
150
30
25
5
1
C
C
C
C
C
Test Condition
B
E
E
C
= 0
= 100 mA
= 800 mA
= 10 mA
= 10 mA
B
= 0
= 0
= 0, f = 1 MHz
= 0
= 20 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
100
0.5
¾
¾
25
40
¾
¾
¾
5
Typ.
120
13
¾
¾
¾
¾
¾
¾
¾
¾
TO-236MOD
2-3F1A
SC-59
2003-03-25
2SC3265
Max
320
0.1
0.1
0.4
0.8
¾
¾
¾
¾
¾
Unit: mm
MHz
Unit
mA
mA
pF
V
V
V
V

Related parts for 2SC3265_03

2SC3265_03 Summary of contents

Page 1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Low Frequency Power Amplifier Applications Power Switching Applications · High DC current gain (1) Low saturation voltage: V · CE (sat 500 mA Complementary to 2SA1298 ...

Page 2

2 2SC3265 2003-03-25 ...

Page 3

RESTRICTIONS ON PRODUCT USE · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...

Related keywords