MPSH10-X-T92-B UTC [Unisonic Technologies], MPSH10-X-T92-B Datasheet - Page 2

• Manufacturer Part Number: MPSH10-X-T92-B
• Description: RF TRANSISTOR
• Manufacturer: UTC [Unisonic Technologies]

MPSH10
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
Output Capacitace
Current Gain Bandwidth Product
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Total Power Dissipation
Collector Current
Junction Temperature
Storage Temperature
ABSOLUTE MAXIMUM RATING
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
FE
SYMBOL
V
V
BV
BV
BV
60-100
CE(SAT)
I
I
BE(ON)
C
h
CBO
EBO
f
FE
A
OB
T
CBO
CEO
EBO
(Ta=25°C,unless otherwise specified)
Ic=100μA
Ic=1mA
I
V
V
I
V
V
V
V
E
C
CB
EB
CE
CE
CB
CE
=10μA
=4mA, I
(Ta=25°C,unless otherwise specified)
SYMBOL
=25V
=2V
=10V, I
=10V, I
=10V, f=1MHZ
=10V, I
TEST CONDITIONS
V
V
V
T
Pc
T
CBO
CEO
EBO
Ic
STG
J
B
=400μA
C
C
C
=4mA
=4mA
=4mA, f=100MHZ
NPN EPITAXIAL SILICON TRANSISTOR
90-130
B
-55 ~ +150
RATINGS
350
150
30
25
50
MIN
650
3
30
25
60
TYP
120 -200
MAX
C
100
100
500
950
0.7
3
QW-R201-022,Ea
UNIT
mW
mA
°C
°C
V
V
V
UNIT
MHZ
2 of 4
mV
mV
nA
nA
pF
V
V
V